Navitas wins US Army programme to develop 10-kilovolt power chips

Navitas Semiconductor ($NVTS) won a US Army programme to develop ultra-high-voltage silicon-carbide power devices. The ALATTIS project will design, fabricate and test a domestic manufacturing process for insulated-gate bipolar transistors rated at 10 kilovolts or more, together with associated diode technology. The work is sponsored by the Army Research Laboratory and supported by the Joint Experimentation and Technology Accelerator.

The award would extend Navitas beyond its existing commercial silicon-carbide range, which reaches 6.5 kilovolts, toward higher-power defense and infrastructure applications. It also supports development of a domestic manufacturing capability that the programme describes as currently unavailable. Contract value, expected revenue and a commercialization timetable were not disclosed. This is a prototype-development assignment, not evidence of a qualified mass-production product or a guaranteed follow-on order for military equipment.

Sources:

• Navitas GlobeNewswire release, reproduced by StockTitan